Design procedure for multifinger MOSFET two‐stage OTA with shallow trench isolation effect
نویسندگان
چکیده
منابع مشابه
Issues in Shallow Trench Isolation CMP
As advancing technologies increase the demand for planarity in integrated circuits, nanotopography has emerged as an important concern in shallow trench isolation (STI) on wafers polished by means of chemical–mechanical planarization (CMP). Previous work has shown that nanotopography—small surface-height variations of 10–100 nm in amplitude extending across millimeter-scale lateral distances on...
متن کاملModeling of chemical mechanical polishing for shallow trench isolation
Chemical mechanical polishing (CMP) is a key process enabling shallow trench isolation (STI), which is used in current integrated circuit manufacturing processes to achieve device isolation. Excessive dishing and erosion in STI CMP processes, however, create device yield concerns. This thesis proposes characterization and modeling techniques to address a variety of concerns in STI CMP. Three ma...
متن کاملOn designing OTA-C graphic-equalizers with MOSFET-triode transconductors
A CMOS audio-equalizer based on a parallel-array of 2ndorder bandpass-sections is presented and realized with triode transconductors. It has a programmable 12db-boost/cut on each of its three decade-bands, easily achieved through the linear dependence of gm on VDS. In accordance with a 0.8μm n-well double-metal fabrication process, a range of simulations supports theoretical analysis and circui...
متن کاملDesign of 100-V Super-Junction Trench Power MOSFET with Low On-Resistance
© 2012 ETRI Journal, Volume 34, Number 1, February 2012 Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance an...
متن کاملShallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Process for Advanced Logic Technology
Shallow trench isolation (STI) requires a high quality oxide with superior fill capability provided by High Density Plasma (HDP) oxide. Unfortunately, the HDP deposition process can create large within die topographies that are difficult to polish directly using conventional silica slurries [1]. High Selective Slurries (HSS) were introduced in order to meet these stringent requirements and they...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IET Circuits, Devices & Systems
سال: 2018
ISSN: 1751-858X,1751-8598
DOI: 10.1049/iet-cds.2017.0419